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| Preliminary SIM100D06AV1 VCES = 600V Ic= 100A VCE(ON) typ. = 1.5V @Ic= 100A "HALF-BRIDGE" IGBT MODULE Feature design technology Low VCE (sat) Low Turn-off losses Short tail current for over 20KHz Applications Motor controls VVVF inverters Inverter-type welding MC over 18KHZ SMPS, Electrolysis UPS/EPS, Robotics Absolute Maximum Ratings @ Tj=25 Symbol VCES VGES IC ICP IF IFM tp Viso Tj Tstg Weight Md (Per Leg) Package : V1 Condition Ratings 600 20 Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Mounting torque with screw : M5 TC = 80 TC = TC = 80 TC = TC = 150 TC = Unit V V A A A A 100 (130) 200 100 (130) 200 6 (8) 2500 -40 ~ 150 -40 ~ 125 190 2.0 AC @ 1 minute V g N.m Static Characteristics @ Tj = 25 Parameters VCE(ON) VGE(th) ICES IGES VFM RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Integrated gate resistor (unless otherwise specified) Min _ Typ 1.50 5.8 Max 1.95 Unit V Test conditions IC = 100A, VGE = 15V VCE = VGE, IC = 4 VGE = 0V, VCE = 600V VCE = 0V, VGE = V 6.5 5.0 400 1.6 2 2.0 V IF = 100A, VGE = 0V Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 Parameters Ciss Coss Crss td(on) tr td(off) tf VRRM IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Maximum Peak Repetitive Reverse Voltage Maximum Reverse leakage current Reverse Recovery Time Reverse Recovery Charge 125 4.7 600 250 SIM100D06AV1 (unless otherwise specified) Unit Test conditions VCE = 25V , VGE = V Min Typ 6100 390 190 70 25 Max pF f = 1 MHz Inductive Switching (125 VCC = 300V ns IC = 100A , VGE = 15V RG = 3.3 V VR = 600V IF = 100A, VR = 300V C di / dt = 2000A / 260 60 Thermal Characteristics Symbol RJC RJC RCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.05 Max 0.44 0.77 - Unit /W specifications Preliminary SIM100D06AV1 Fig 1. Typ. IGBT Output Characteristics Fig 2. Typ. IGBT Out Characteristics Fig 3. Typ. Transfer Characteristics Fig 4. Reverse Bias Operating Area Fig 5. Forward Characteristics of Diode Fig 6. Operating Frequency vs Collector Current Preliminary Package Outline (dimensions in mm) SIM100D06AV1 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com |
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